maximum ratings all ratings per die: t c = 25c unless otherwise speci ? ed . ultra low r ds(on) low miller capacitance ultra low gate charge, q g avalanche energy rated extreme dv / dt rated super junction mosfet "coolmos? comprise a new family of transistors developed by in? neon technologies ag. "coolmos" is a trade- mark of in? neon technologies ag." g d s unless stated otherwise, microsemi discrete mosfets contain a single mosfet die. this device is made with two parallel mosfet die. it is intended for switch-mode operation. it is not suitable for linear mode operation. microsemi website - http://www.microsemi.com apt94n65b2c6 APT94N65LC6 650v 94a 0.035 symbol parameter apt94n65b2_lc6 unit v dss drain-source voltage 650 volts i d continuous drain current @ t c = 25c 1 95 amps continuous drain current @ t c = 100c 61 i dm pulsed drain current 2 282 v gs gate-source voltage continuous 20 volts p d total power dissipation @ t c = 25c 833 watts t j ,t stg operating and storage junction temperature range -55 to 150 c t l lead temperature: 0.063" from case for 10 sec. 260 i ar avalanche current 2 9.3 amps e ar repetitive avalanche energy 3 ( id = 9.3a, vdd = 50v ) 1.76 mj e as single pulse avalanche energy ( id = 9.3a, vdd = 50v ) 1160 symbol characteristic / test conditions min typ max unit bv (dss) drain-source breakdown voltage (v gs = 0v, i d = 2.0ma) 650 volts r ds(on) drain-source on-state resistance 4 (v gs = 10v, i d = 35.2a) 0.03 0.035 ohms i dss zero gate voltage drain current (v ds = 650v, v gs = 0v) 1.0 50 a zero gate voltage drain current (v ds = 650v, v gs = 0v, t c = 150c) 100 i gss gate-source leakage current (v gs = 20v, v ds = 0v) 200 na v gs(th) gate threshold voltage (v ds = v gs , i d = 3.5ma) 2.5 3 3.5 volts static electrical characteristics caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. 050-7214 rev a 4-2012 to-264 t-max ? apt94n65b2c6 APT94N65LC6 downloaded from: http:///
apt94n65b2_lc6 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10 -5 10 -4 10 -3 10 -2 0.1 1 10 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: dynamic characteristics source-drain diode ratings and characteristics thermal characteristics symbol characteristic test conditions min typ max unit c iss input capacitance v gs = 0v v ds = 25v f = 1 mhz 8140 pf c oss output capacitance 5451 c rss reverse transfer capacitance 603 q g total gate charge 5 v gs = 10v v dd = 300v i d = 94a @ 25c 320 nc q gs gate-source charge 50 q gd gate-drain ("miller ") charge 168 t d(on) turn-on delay time inductive switching v gs = 15v v dd = 400v i d = 94a @ 25c r g = 4.3 26 ns t r rise time 59 t d(off) turn-off delay time 323 t f fall time 172 e on turn-on switching energy 6 inductive switching @ 25c v dd = 400v, v gs = 15v i d = 94a, r g = 4.3 2916 j e off turn-off switching energy 3257 e on turn-on switching energy 6 inductive switching @ 125c v dd = 400v, v gs = 15v i d =94a, r g = 4.3 3947 e off turn-off switching energy 4034 symbol characteristic / test conditions min typ max unit i s continuous source current (body diode) 92.6 amps i sm pulsed source current 2 (body diode) 282 v sd diode forward voltage 4 (v gs = 0v, i s = -52.4a) 0.9 1.2 volts dv / dt peak diode recovery dv / dt 7 15 v/ns t rr reverse recovery time (i s = -94a, di / dt = 100a/ s) t j = 25c 1063 ns q rr reverse recovery charge(i s = -94a, di / dt = 100a/ s) t j = 25c 39 c i rrm peak recovery current(i s = -94a, di / dt = 100a/ s) t j = 25c 63 amps symbol characteristic min typ max unit r jc junction to case 0.15 c/w r ja junction to ambient 31 1 continuous current limited by package lead temperature. 2 repetitive rating: pulse width limited by maximum junction temperature 3 repetitive avalanche causes additional power losses that can be calculated as p av = e ar *f . pulse width tp limited by tj max. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 4 pulse test: pulse width < 380 s, duty cycle < 2% 5 see mil-std-750 method 3471 6 eon includes diode reverse recovery. 7 maximum diode commutation speed = di/dt 300a/ s 050-7214 rev a 4-2012 downloaded from: http:///
050-7214 rev a 4-2012 typical performance curves apt94n65b2_lc6 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 0 50 100 150 0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 0 10 20 30 40 50 60 70 80 90 100 25 50 75 100 125 150 0 20 40 60 80 100 120 0 2 4 6 8 10 0 50 100 150 200 250 0 5 10 15 20 25 30 15v v gs = 20v t j = 25c t j = -55c v ds , drain-to-source voltage (v) figure 2, low voltage output characteristics i d , drain current (a) t j = 125c v gs , gate-to-source voltage (v) figure 3, transfer characteristics i d , drain current (a) t c , case temperature (c) figure 5, maximum drain current vs case temperature i d , drain current (a) i d, drain current (a) figure 4, r ds (on) vs drain current t j , junction temperature (c) figure 6, breakdown voltage vs temperature bv dss , drain-to-source breakdown voltage (normalized) 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 t j , junction temperature (c) figure 7, on-resistance vs temperature r ds(on) , drain-to-source on resistance (normalized) 4.5v 5.5v 6v 5v v gs = 10v v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle normalized to v gs = 10v @ 35.2a 6.5v 7.0v 10v 0.6 0.7 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t c , case temperature (c) figure 8, threshold voltage vs temperature v gs (th), threshold voltage (normalized) i d , drain current (a) v ds , drain-to-source voltage (v) figure 9, maximum safe operating area 1 10 100 800 1 10 100 800 1ms 100ms dc line 100s 10ms 10s r ds(on) , drain-to-source on resistance (normalized) downloaded from: http:///
050-7214 rev a 4-2012 typical performance curves apt94n65b2_lc6 0 2 4 6 8 10 12 14 0 100 200 300 400 10 100 1,000 10,000 60,000 0 100 200 300 400 500 c iss v ds = 520v v ds , drain-to-source voltage (v) figure 10, capacitance vs collector-to-emitter voltage c, capacitance (pf) v ds = 325v q g , total gate charge (nc) figure 11, gate charges vs gate-to-source voltage v gs , gate-to-source voltage (volts) c oss c rss i d = 94a v ds = 130v 0 2000 4000 6000 8000 10000 12000 14000 0 10 20 30 40 50 0 50 100 150 200 250 300 0 50 100 150 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 40 80 120 160 0 100 200 300 400 500 t j = 25c i d (a) figure 13, delay times vs current t d(on) and t d(off) (ns) v sd, source-to-drain voltage (v) figure 12, source-drain diode forward voltage i dr , reverse drain current (a) i d (a) figure 14 , rise and fall times vs current t r , and t f (ns) r g , gate resistance (ohms) figure 16, switching energy vs gate resistance switching energy (uj) 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 0 50 100 1 5 i d (a) figure 15, switching energy vs current switching energy ( j) t j = +150c v dd = 400v r g = 4.3 t j = 125c l = 100 h t d(on) t d(off) v dd = 400v r g = 4.3 t j = 125c l = 100 h e on includes diode reverse recovery. e on e off v dd = 400v r g = 4.3 t j = 125c l = 100 h t r t f e on e off v dd = 400v i d = 94a t j = 125c l = 100 h e on includes diode reverse recovery. downloaded from: http:///
figure 17, turn-on switching waveforms and de? nitions figure 18, turn-off switching waveforms and de? nitions i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g figure 19, inductive switching test circuit t j = 125c collector current collector voltage gate voltage 10% t d(on) 90% 10% t r 5% switching energy t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) drai n source gate these dimensions are equal to the to-247 without the mounting hole. drai n 2-plcs. 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090)2.69 (.106) 0.76 (.030)1.30 (.051) 3.10 (.122)3.48 (.137) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drai n source gate dimensions in millimeters and (inches) drai n 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. dimensions in millimeters and (inches) e3 100% sn plated to-264 (l) package outline t-max ? (b2) package outline 1.016(.040) apt75dq60b 050-7214 rev a 4-2012 typical performance curves apt94n65b2_lc6 downloaded from: http:///
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